Ferroelectric memory device

ABSTRACT

A ferroelectric memory device has a high performance, includes no Pb, and can be directly mounted onto an Si substrate. The ferroelectric memory device includes a (001)-oriented BiFeO 3  ferroelectric layer  5  with a tetragonal structure, which is formed on an electrode  4  made of a perovskite material formed on an Si oxide film. The electrode  4  with a perovskite structure is formed by an ion beam assist method.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a ferroelectric memory device including aBiFeO₃ ferroelectric layer.

Priority is claimed on Japanese Patent Application No. 2003-173247,filed Jun. 18, 2003, the content of which is incorporated herein byreference.

2. Description of Related Art

Ferroelectric materials are beginning to be put to practical use asrecording materials in nonvolatile memory devices because they have alarge capacity and low power consumption. Pb(Zr_(1-x)Tu_(x))O₃ (PZT)which is a perovskite-type oxide and SrBi₂Ta₂O₉ (SBT) which is a Bilayered compound are representatives of ferroelectric materials used innonvolatile memory devices. For a nonvolatile memory device using suchferroelectric materials, namely a ferroelectric memory device, it isexpected that its dielectric polarization moment and Curie temperature(transition temperature from paraelectric to ferroelectric), which arecharacteristics of the device, are large and high.

For example, it is expected, for better sensitivity of a senseamplifier, that its residual dielectric polarization moment Pr is atleast larger than 10 μC/cm². Especially, the dielectric polarizationmoment is expected to be even larger for a memory device with a higherdensity including a capacitor with a smaller area than that ofcapacitors in existing devices. From the viewpoint of reliability ofrecorded data, the Curie temperature is expected to be more than 200° C.Especially, recording materials are expected to be able to hold memorynear the operating temperature range (e.g., from −10° C. to +100° C.),that is, it is expected that structural phase transition does not occurin the temperature range of the recording materials. Additionally, it isnecessary that the materials can record and reproduce data repeatedlymore than 10¹² times, preferably 10¹⁵ times. From the viewpoint offuture miniaturization, the thickness of the recording film(ferroelectric layer) is expected to be 50-200 nm, followed by 10-50 nm.In this case, leak current through the ferroelectric layer is expectedto be as low as 10⁻⁸-10⁻⁶ A/cm² at the time of a 100 kV/cm application.

Ferroelectric materials belonging to the PZT family exhibits a largedielectric polarization moment, e.g., 30-50 μC/cm², and have a Curietemperature of more than 400° C. and therefore the structural phasetransition does not occur in the operating temperature range of thematerials. However, composition control of Pb is difficult because Pbcan easily evaporate from the ferroelectric layers. Additionally, theevaporation of Pb leads to deterioration of the environment because Pbis harmful thereto. For these reasons, production of ferroelectricmemory devices including these materials needs to be reviewed.

Ferroelectric materials belonging to the SBT family exhibits adielectric polarization moment of 20 μC/cm² at maximum. However, itsorientation control in the materials is difficult because of a layeredstructure, and miniaturization of devices made of these materials isdifficult because of the existence of crystal grains in the materials.Additionally, the materials are damaged by hydrogen at the time offormation of a passivation film in a post-process. Under thesecircumstances, BaTiO₃ is also one promising ferroelectric material. Thismaterial exhibits a dielectric polarization moment of 30 μC/cm² alongthe c-axis at room temperature. BaTiO₃ has a low Curie temperature of120° C. and therefore structural phase transition from the tetragonalphase to the orthorhombic phase occurs near 0° C. in the materials.Since BaTiO₃ has such a transition temperature near the operatingtemperature, the value of the dielectric polarization moment is unstableand the materials may degrade easily with the structural phasetransition.

In light of these circumstances, BiFeO₃ is proposed as a newferroelectric material for a ferroelectric memory device (see, e.g.,Japanese Unexamined Patent Application, First Publication No.2001-210794). It has been confirmed in recent reports that BiFeO₃ has ahigh ferroelectric characteristic of dielectric polarization moment of60-70 μC/cm² (see, e.g., Science, Vol. 299, 1719-1721, 2003). In thearticle in Science, upper and lower electrodes between which aferroelectric layer is sandwiched are made of SrRuO₃, and theferroelectric layer made of BiFeO₃ has a perovskite structure in atetragonal system.

Recently the demand for high performance and high-density integration ofsemiconductor devices is increasing. Accordingly, the high performanceis demanded also for a ferroelectric memory device, and additionally,directly mounting onto a Si substrate or implementation to a Sisubstrate is expected. For this reason, BiFeO₃ is thought to be a verypromising candidate for a ferroelectric material because it has a highferroelectric characteristic as described above, and does not contain Pbthat is detrimental to the environment.

However, there is a problem to be solved in a ferroelectric memorydevice using BiFeO₃, that is, it is very difficult to directly implementthe ferroelectric memory device including a lower electrode on an Sisubstrate. This is because normally a natural oxide film is formed on anSi substrate, and it is difficult to make a lower electrode film and aBiFeO₃ film grow epitaxially on the natural oxide film. For this reason,under the existing circumstances, implementation of a ferroelectricmemory device using BiFeO₃ with a tetragonal structure on an Sisubstrate has not been realized yet.

In view of these circumstances, the purpose of the present invention isto provide a ferroelectric memory device which has high performance anddoes not contain Pb and which is directly implementable on an Sisubstrate.

SUMMARY OF THE INVENTION

In order to resolve the above-described problem, the present inventionprovides a ferroelectric memory device including an Si oxide film, anelectrode made of a perovskite material and formed on the Si oxide film,and a (001)-oriented BiFeO₃ ferroelectric layer with a tetragonalstructure formed on the electrode. According to this ferroelectricmemory device, it is possible to directly mount a ferroelectric memorydevice including a ferroelectric layer onto an Si substrate because aBiFeO₃ ferroelectric layer can grow epitaxially on an electrode made ofa perovskite material (material having a perovskite structure) formed onan Si oxide film. The ferroelectric memory device has a (001)-orientedBiFeO₃ layer with a tetragonal structure as a ferroelectric layer, whichhas a high ferroelectric characteristic such as a high dielectricpolarization moment, and therefore the memory device has a highperformance and is environmentally preferable because of no inclusion ofPb therein.

In the ferroelectric memory device, it is preferable that the electrodemade of a perovskite or perovskite-type material be formed by an ionbeam assist deposition method. According to this ferroelectric memorydevice, the electrode made of a perovskite-type material can growepitaxially with ease, for example, on a natural oxide film on an Sisubstrate.

In the ferroelectric memory device, it is preferable that the electrodemade of a perovskite-type material be epitaxially grown with a(100)-orientation. According to this ferroelectric memory device, a(001)-oriented BiFeO₃ ferroelectric layer with a tetragonal structurecan grow epitaxially with good quality on the electrodes.

In the ferroelectric memory device, it is preferable that the electrodemade of a perovskite-type material be made of at least one of SrRuO₃,Nb—SrTiO₃, La—SrTiO₃, and (La, Sr)CoO₃. According to this ferroelectricmemory device, a (001)-oriented BiFeO₃ layer with a tetragonal structurecan grow with good quality on the electrodes.

In the ferroelectric memory device, it is preferable that the electrodemade of a perovskite-type material be formed on a buffer layer which isformed on the substrate by an ion beam assist deposition method.According to this ferroelectric memory device, since a buffer layer isformed on the substrate by an ion beam assist deposition method, thebuffer layer can grow epitaxially with good quality on a natural oxidefilm grown on the Si substrate and therefore an electrode made of aperovskite material can grow epitaxially with good quality on the bufferlayer.

In the ferroelectric memory device, it is preferable that the bufferlayer be epitaxially grown with a (100)-orientation. According to thisferroelectric memory device, an electrode made of a perovskite materialwith a (100)-orientation can grow epitaxially with good quality on thebuffer layer.

In the ferroelectric memory device, it is preferable that the BiFeO₃ferroelectric layer has a perovskite structure, in which some Fe atomslocated at B-sites in the structure are substituted by magnetic metalatoms. It is preferable that the magnetic metal atoms be at least oneselected from the group of Mn, Ru, Co, and Ni. According to thisferroelectric memory device, the magnetism of the BiFeO₃ ferroelectriclayer is strengthened and its dielectric characteristic improves, whichresults in higher performance of the ferroelectric memory device.

In the ferroelectric memory device, it is preferable that the magneticmetal atoms be substituted for 1-10% of Fe atoms located at all of theB-sites in the BiFeO₃ ferroelectric layer. In the case of less than 1%,these substitutions cannot improve the magnetism very much, and in thecase of more than 10%, it is not expected that these substitutions canimprove the magnetism more than that of case of less than 10%.

In this ferroelectric memory device, it is preferable that the BiFeO₃ferroelectric layer has a perovskite structure, in which some Fe atomslocated at B-sites are substituted by metal atoms whose valencies arehigher than that of Fe. It is preferable that the metal atoms whosevalencies are higher than that of Fe be at least one selected from thegroup of V, Nb, Ta, W, Ti, Zr, and Hf. In the perovskite structure ofBiFeO₃, Bi atoms located at A-sites in the structure evaporate easilyand accordingly defects occur at the A-sites. In a BiFeO₃ crystal inwhich there are defects missing Bi atoms at A-sites in the structure, acurrent leaks easily through this crystal because the BiFeO₃ crystal isno longer electrically neutral and no longer electrically insulated.According to this ferroelectric memory device, since some Fe atomslocated at B-sites are substituted by metal atoms whose valencies arehigher than that of Fe, the BiFeO₃ crystal can be maintained to beneutral and insulated in the entire crystal, which results in theprevention of the current leakage.

In this ferroelectric memory device, it is preferable that the metalatoms whose valencies are higher than Fe be substituted for 1-30% of Featoms located at all of the B-sites in the BiFeO₃ ferroelectric layer.In the case of less than 1%, these substitutions cannot improvesufficiently the effect of preventing the current leakage, and in thecase of more than 30%, it cannot be expected that these substitutionscan improve the effect of preventing the current leakage more than thatof the case of less than 30%.

The present invention provides a ferroelectric memory device includingan electrode with a (111)-orientation and a (111)-oriented BiFeO₃ferroelectric layer with a rhombohedral structure formed on theelectrode. According to this ferroelectric memory device, it is possibleto directly mount a ferroelectric memory device including aferroelectric layer onto an Si substrate because the BiFeO₃ferroelectric layer can grow epitaxially on an electrode with a(111)-orientation which can grow epitaxially, for example, on a naturaloxide film grown on the Si substrate. The ferroelectric memory devicehas a (111)-oriented BiFeO₃ ferroelectric layer with a rhombohedralstructure as a ferroelectric layer, which has a high ferroelectriccharacteristic, such as a high dielectric polarization moment, which issimilar to that of a (001)-oriented BiFeO₃ ferroelectric layer with atetragonal structure, and therefore the memory device has a highperformance and is environmentally preferable because of no inclusion ofPb therein.

In the ferroelectric memory device, the electrode with a(111)-orientation can be formed of Pt with a (111)-orientation.According to this ferroelectric memory device, a Pt film grows with a(111)-orientation regardless of the film formation method, therefore, anelectrode can be easily formed, for example, by a rather simpler methodsuch as sputtering.

In the ferroelectric memory device, the electrode with a(111)-orientation can have a perovskite structure. According to thisferroelectric memory device, a (111)-oriented BiFeO₃ layer with aperovskite structure can grow epitaxially with good quality on theelectrode.

In the ferroelectric memory device, an electrode with a (111)-orientatedperovskite structure can be epitaxially grown by an ion beam assistdeposition method. According to this ferroelectric memory device, theelectrode made of a perovskite material can grow epitaxially with ease,for example, on a natural oxide film grown on an Si substrate.

In the ferroelectric memory device, it is preferable that the electrodebe made of at least one of SrRuO₃, Nb—SrTiO₃, La—SrTiO₃, and (La,Sr)CoO₃. According to this ferroelectric memory device, a (111)-orientedBiFeO₃ ferroelectric layer with a rhombohedral structure can growepitaxially with ease on the electrode.

In the ferroelectric memory device, it is preferable that the BiFeO₃ferroelectric layer has a perovskite structure, in which some Fe atomslocated at B-sites in the structure are substituted by magnetic metalatoms. It is preferable that the magnetic metal atoms be at least oneselected from the group of Mn, Ru, Co, and Ni. According to thisferroelectric memory device, the magnetism of the BiFeO₃ ferroelectriclayer is strengthened and its dielectric characteristic improves, whichresult in higher performance of the ferroelectric memory device.

In the ferroelectric memory device, it is preferable that the magneticmetal atoms be substituted for 1-10% of Fe atoms located at all of theB-sites in the BiFeO₃ ferroelectric layer. In the case of less than 1%,the substitution cannot improve the magnetism very much, and in the caseof more than 10%, it is cannot be expected that the substitution canimprove the magnetism more than that of the case of less than 10%.

In the ferroelectric memory device, it is preferable that the BiFeO₃ferroelectric layer has a perovskite structure, in which some Fe atomslocated at B-sites are substituted by metal atoms whose valencies arehigher than that of Fe. It is preferable that the metal atoms whosevalencies are higher than that of Fe be at least one selected from thegroup of V, Nb, Ta, W, Ti, Zr, and Hf. In the perovskite structure ofBiFeO₃, Bi atoms located at A-sites in the structure evaporate easilyand accordingly defects occur at the A-sites. In a BiFeO₃ crystal inwhich there are defects of missing Bi atoms at A-sites in the structure,a current leaks easily through this crystal because the BiFeO₃ crystalis no longer electrically neutral and no longer electrically insulated.According to this ferroelectric memory device, since some Fe atomslocated at B-sites are substituted by metal atoms whose valencies arehigher than that of Fe, the BiFeO₃ crystal can be maintained neutral andinsulated in the entire crystal, which results in the prevention of thecurrent leakage.

In the ferroelectric memory device, it is preferable that the metalatoms whose valencies are higher than Fe be substituted for 1-30% of Featoms located at all of the B-sites in the BiFeO₃ ferroelectric layer.In the case of less than 1%, the substitution cannot sufficientlyimprove the prevention of the current leakage, and in the case of morethan 30%, it cannot be expected that the substitution can improve theprevention of the current leakage more than that of the case of lessthan 30%.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross section of an embodiment of a ferroelectric memorydevice of the present invention.

FIGS. 2A and 2B show schematic illustrations of a perovskite structure.

FIGS. 3A, 3B, and 3C show cross sections which schematically show stagesof manufacturing the ferroelectric memory device of the presentinvention.

FIGS. 4A, 4B, and 4C show cross sections which schematically show stagesof manufacturing the ferroelectric memory device of the presentinvention.

FIG. 5 shows a cross section of another embodiment of the ferroelectricmemory device of the present invention.

FIG. 6 shows a cross section of an example of a planar-typeferroelectric memory device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, ferroelectric memory devices of the present invention aredescribed in detail.

FIG. 1 shows a schematic illustration of an embodiment of aferroelectric memory device of the present invention, where referencenumber 1 shows a ferroelectric memory device. The ferroelectric memorydevice 1 is formed on a (100)-plane of a silicon (Si) substrate 2, andincludes a buffer layer 3 formed on the Si substrate 2, a lowerelectrode 4 formed on the buffer layer 3, a ferroelectric layer 5 formedon the lower electrode 4, and an upper electrode 6 formed on theferroelectric layer 5.

A layer formed of grains with a single orientation, i.e., only with anorientation parallel to the through-thickness of a layer, can be used asthe buffer layer 3, and it is preferable that the grains in the bufferlayer also have a planer orientation, i.e., the grains have orientationsin all three-dimensions. This is because good bonding or adhesionbetween the Si substrate 2 with a natural oxide film thereon and thelower electrode 4 described later can be attained by including thebuffer layer 3. It is preferable that this buffer layer 3 includes atleast one of metal oxides with an NaCl structure, metal oxides with afluorite structure, and metal oxides with a perovskite structure, and itis especially preferable that the buffer layer 3 be formed of a layeredstructure of a metal oxide with an NaCl structure or a metal oxide witha fluorite structure, and a metal oxide with a perovskite structure.This is because the lattice mismatch between a metal oxide with an NaClstructure or a metal oxide with a fluorite structure and a metal oxidewith a perovskite structure is small, and therefore it is advantageousto form a layer with a perovskite structure on which the lower electrode4, especially with a perovskite structure is formed, as described later.

For this reason, the buffer layer 3 of the present embodiment is formedfrom a first buffer layer 7 and a second buffer layer 8, both of whichare made of a metal oxide with an NaCl structure or a metal oxide with afluorite structure, and a third buffer layer 9 made of a metal oxidewith a perovskite structure formed on the second buffer layer 8. Thefirst buffer layer 7 is a component of the buffer layer of the presentinvention, and can be made of yttrium stabilized zirconia (YSZ) with acubic system with a (100)-orientation, e.g., of a thickness of 100 nm. AYSZ expressed by the following formula can be used;Zr_(1-x)Ln_(x)O_(y) (0=x=1.0)

-   -   (Ln:Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu)

This first buffer layer 7 is directly formed on the Si substrate 2,where a natural oxide (SiO₂) is usually grown on the surface of the Sisubstrate 2. It is difficult to grow an epitaxial layer of YSZ on thisnatural oxide by usual film formation methods. For this reason, in thisembodiment, the first buffer layer 7 can grow epitaxially especially byan ion beam assist deposition method, described later. It is allowablethat the natural oxide film grown on the Si substrate 2 is an amorphousfilm. The second buffer film 8 can be made of CeO₂ with a cubic systemwith a (100)-orientation, e.g., of a thickness of 100 nm, which is grownepitaxially on the first buffer layer 7.

Materials for the first buffer layer 7 or the second buffer layer 8 arenot restricted to YSZ or CeO₂, and can be a metal oxide with an NaClstructure or a metal oxide with a fluorite structure. MgO, CaO, SrO,BaO, MnO, FeO, CoO, NiO and solid solutions including these compoundsare representatives of a metal oxide with an NaCl structure, and it ispreferable that MgO, CaO, SrO, BaO or solid solutions including one ofthese compounds, among these, be used. Lattice mismatches between thesemetal oxides with an NaCl structure and a metal oxide with a perovskitestructure are very small. In the case that MgO is used in place of YSZ,the first buffer layer 7 has a thickness of 20 nm, for example.

YSZ, CeO₂, ZrO₂, ThO₂, UO₂, and solid solutions including thesecompounds are representatives of a metal oxide with a fluoritestructure, and it is preferable that at least one of YSZ, CeO₂, ZrO₂ andsolid solutions including one of these compounds, among these, be used.Lattice mismatches between these metal oxides with a fluorite structureand a metal oxide with a perovskite structure are very small.

The third buffer layer 9 can be made of YBa₂Cu₃O_(x) (e.g., x is 7),which is a layered oxide with a perovskite structure, and grownepitaxially on the second buffer layer 8 with an orthorhombic systemwith a (001)-orientation, e.g., of a thickness of 30 nm. Since the thirdbuffer layer 9 is made of a metal oxide with a perovskite structure, alattice mismatch between the third buffer layer 9 and the second bufferlayer 8 is very small. Therefore, a film with substantially no defectsin the crystal structure can grow, and a lower electrode 4 with aperovskite structure can grow epitaxially on this third buffer layer 9.Materials for the third buffer layer 9 are not restricted toYBa₂Cu₃O_(x) (e.g., x is 7), and can be another metal oxide with aperovskite structure. CaRuO₃, SrRuO₃, BaRuO₃, SrVO₃, (La, Sr)MnO₃, (La,Sr)CrO₃, (La, Sr)CoO₃, or solid solutions including these compounds canbe used.

The lower electrode 4 as an electrode in the present invention, is madeof a metal oxide with a perovskite structure which is the same as thatof the third buffer layer 9, and is grown epitaxially with a pseudocubic system with a (100)-orientation, e.g., of a thickness of 50 nm.The same compounds which can be used for the third buffer film 9 can beapplied as a metal oxide with a perovskite structure of which the lowerelectrode 4 is made, and at least one of SrRuO₃, Nb—SrTiO₃, La—SrTiO₃,and (La, Sr)CoO₃ can be preferably used, where Nb—SrTiO₃ is SrTiO₃ dopedwith Nb, and La—SrTiO₃ is SrTiO₃ doped with La. Since these compoundshave high electric conductivity and high chemical stability, the lowerelectrode 4 made of these compounds has high electric conductivity andhigh chemical stability. Additionally, a (001)-oriented BiFeO₃ layerwith a tetragonal structure can grow with good quality on the electrode4. In this embodiment, SrRuO₃ with a pseudo cubic system with a(100)-orientation is used.

The ferroelectric layer 5 works as a recording material in theferroelectric memory device 1, and is made of BiFeO₃ with a perovskitestructure. This ferroelectric layer 5 is grown epitaxially with atetragonal structure with a (001)-orientation, e.g., of a thickness of100 nm. Perovskite structures are shown in FIGS. 2A and 2B, where aposition indicated by A is an A-site, and a position indicated by B is aB-site. In BiFeO₃, a Bi atom is located at an A-site and an Fe atom islocated at a B-site. O (oxygen) is located at a position indicated by Oin FIGS. 2A and 2B. Since BiFeO₃ has such a structure, relativedisplacements between positive and negative ions, which constitute thecrystal, occur, a centrosymmetry of the crystal collapses, consequentlyan intrinsic polarization is generated, and therefore the BiFeO₃ comesto have a hysteresis characteristic when an electric voltage is appliedto the BiFeO₃. BiFeO₃ can work as an involatile memory by utilizing thehysteresis characteristic based on the intrinsic polarization.

In such a BiFeO₃ with a perovskite structure, some Fe atoms located atB-sites can be substituted by magnetic metal atoms. It is preferablethat such magnetic metal atoms be at least one selected from the groupof Mn, Ru, Co, and Ni. By this addition of the magnetic metal atoms, themagnetism of the BiFeO₃ ferroelectric layer 5 is strengthened and itsdielectric characteristic improves, which can result in higherperformance of the ferroelectric memory device 1. It is preferable thatMn atoms or Ru atoms whose ionic radii are larger than that of Fe beadded, and by this substitution by these metal atoms, a BiFeO₃ layerwith a tetragonal structure can grow epitaxially with good quality.

It is preferable that an amount of an addition of the magnetic metalatoms be such that 1-10% of Fe atoms located at all of the B-sites inthe crystal structure of the ferroelectric layer 5 is substituted due tothe addition. In the case of less than 1%, the substitution cannotimprove the magnetism very much, and in the case of more than 10%, it isnot expected that the substitution can improve the magnetism more thanthat of the case of less than 10%. In the case of Mn, Mn atoms can besubstituted for 1-30% of Fe atoms located at all of the B-sites in thecrystal structure of the ferroelectric layer 5. This is because themagnetism can be improved by the substitution of more than 10%, and upto 30%.

In the BiFeO₃, some Fe atoms located at B-sites can be substituted bymetal atoms whose valencies are higher than that of Fe. It is preferablethat metal atoms whose valencies are higher than that of Fe (+3 value)be selected from the group of V (+5 value), Nb (+5 value), Ta (+5value), W (+5 value), Ti (+4 value), Zr (+4 value), and Hf (+4 value).In BiFeO₃ with a perovskite structure, Bi atoms located at A-sites inthe structure evaporate easily and accordingly the A-sites becomedefects. In a BiFeO₃ crystal which has defects of missing Bi atoms atA-sites in the structure, a current leaks easily through the crystalbecause the BiFeO₃ crystal is no longer electrically neutral and nolonger electrically insulated. By the substitution of some Fe atomslocated at B-sites by metal atoms whose valencies are higher than thatof Fe, the BiFeO₃ crystal can be maintained neutral and insulated in theentire crystal, which results in the prevention of the current leakage.

It is preferable that an amount of an addition of the metal atoms whosevalencies are higher than Fe be such that 1-30% of Fe atoms located atall of the B-sites in the crystal structure of the ferroelectric layer 5is substituted due to the addition. In the case of less than 1%, thesubstitution cannot sufficiently improve the prevention of the currentleakage, and in the case of more than 30%, it cannot be expected thatthe substitution can improve the prevention of the current leakage morethan that of the case of less than 30%. The upper electrode 6 is made ofSrRuO₃, and is grown epitaxially with a pseudo cubic system with a(100)-orientation, e.g., of a thickness of 50 nm, which is the same asthat of the lower electrode 5. The materials of the upper electrode 6are not restricted to SrRuO₃, and Pt, Ir, IrO_(x) and other knownmaterials for an electrode can be used.

In manufacturing such a ferroelectric memory device 1, first, an Sisubstrate 2 with a surface of a (100)-plane is prepared. An Si substrate2 with uniform thickness, and without deflection and flaws is preferablyused. In the present invention, the Si substrate 2 includes an SOI (Sion Insulator) substrate. Such an Si substrate 2 usually has a naturaloxide film (SiO₂) thereon.

Next, the substrate 2 is loaded on a substrate holder, and these areinstalled in a vacuum chamber (not shown). In the vacuum chamber,targets (a target for each buffer layer) including constituent elementsof the buffer layers 7, 8 and 9, and targets including constituentelements of the lower electrode 4, the ferroelectric layer 5, and theupper electrode 6 are located by being spaced with predetermineddistances, and facing the substrate 2. Each target whose composition isthe same as or similar to a composition of the first buffer layer 7, thesecond buffer layer 8, the third buffer layer 9, the lower electrode 4,the ferroelectric layer 5, or the upper electrode 6, is preferably used.Namely, YSZ of a desired composition or a composition similar to that ispreferably used as a target for the first buffer layer 7, CeO₂ of adesired composition or a composition similar to that is preferably usedas a target for the second buffer layer 8, and YBa₂Cu₃O_(x) of a desiredcomposition or a composition similar to that is preferably used as atarget for the third buffer layer 9. SrRuO₃ of a desired composition ora composition similar to that is preferably used as both targets for thelower electrode 4 and the upper electrode 6, and a BiFeO₃ of a desiredcomposition or a composition similar to that is preferably used as atarget for the ferroelectric layer 5.

As described above, the first buffer layer 7 is directly formed on thesilicon substrate 2 by an ion beam assist deposition method, as shown inFIG. 3A. Namely, by a laser ablation method in which laser light isirradiated on the target for the first buffer layer 7 and thereby atomsincluding oxygen atoms and gold atoms are ejected out from the target,and a plume is generated. The plume targets the silicon substrate 2 andmakes contact with the silicon substrate 2. At substantially the sametime, an ion assist is carried out, namely, an ion beam is irradiated onthe surface of the silicon substrate 2 from a predetermined angledescribed later. By such an ion assist, a YSZ layer grows epitaxiallywith a cubic system with a (100)-orientation, despite the presence of anatural oxide film on the surface of the silicon substrate 2.

As methods for ejecting constituent atoms of YSZ from the target,besides the method of laser irradiation on the target surface describedabove, for example, methods of irradiating an argon gas (an inert gas)plasma or electrons on the target surface can be used. However, themethod of laser irradiation on the target surface is the most preferableof these methods. According to these methods, atoms can be ejected fromthe target easily and certainly by using a simple vacuum chamber with awindow for laser irradiation.

A pulse laser with a wavelength of 150-300 nm and a pulse duration of1-100 ns can be preferably used as a laser irradiated on the target. Tobe concrete, an excimer laser including such as an ArF excimer laser, aKrF excimer laser, and an XeCl excimer laser, a YAG laser, YVO₄ laser,and CO₂ laser are representatives. An ArF excimer laser or a KrF excimerlaser is especially preferable among these. The ArF excimer laser andthe KrF excimer laser are both easy to handle and therewith atoms can beejected more efficiently from the target.

Ions irradiating a surface of the Si substarate 2 in an ion beam assistare not restricted to a specified kind of ion, but at least one kind ofion selected form the group of inert gases such as argon, helium, neon,xenon, and krypton, and ions mixed with one or more of these ions andoxygen ions are preferably used. For example, a Kauffman-type ion sourceis preferable as an ion beam source, and therewith, an ion beam can berather easily generated.

The predetermined angle from which an ion beam is irradiated on asurface of the Si substrate 2 is not restricted to a specified angle,but an angle of 35-65 degrees inclined to the surface of the Sisubstrate 2 is preferable. In the case of forming the first buffer layer7 made mainly of a metal oxide with an NaCl structure, 42-47 degrees ofthe irradiation angle is preferable, and in the case of forming a firstbuffer layer 7 made mainly of a metal oxide with a fluorite structure,52-57 degrees of the irradiation angle is preferable. In this example,since the first buffer layer 7 is made of YSZ of a metal oxide with afluorite structure, 52-57 degrees of the irradiation angle, especiallyaround 55 degrees, is used. The first buffer layer 7 in a cubic systemwith a (100)-orientation with high quality can be formed on the surfaceof the Si substrate 2 by an irradiation of ion beams with such anirradiation angle to the Si substrate 2.

Ions such as argon ions are irradiated on targets from the <111>direction against the target and, at the same time, a laser ablation iscarried out on the targets. When the first buffer layer 7 with a metaloxide with an NaCl structure such as MgO is formed, ions such as argonions are irradiated on targets from the <110> direction against thetarget and, at the same time, a laser ablation is carried out on thetargets.

Conditions for forming such a first buffer layer 7 are not restricted tospecified ones provided that the first buffer layer 7 can growepitaxially, e.g., the following conditions can be adopted. Thefrequency of the laser is preferably less than 30 Hz, and morepreferably less than 15 Hz. The energy, density of the laser ispreferably more than 0.5 J/cm², and more preferably more than 2 J/cm².

The acceleration voltage is preferably around 100-300 V, and morepreferably around 150-250 V. The dose of the ion beam is preferablyaround 1-30 mA, and more preferably around 5-15 mA.

The temperature of an Si substrate 2 is preferably around 0-50° C., andmore preferably around room temperature (5-30° C.). The distance betweenthe Si substrate 2 and the target is preferably less than 60 mm, andmore preferably less than 45 mm.

The pressure in the vacuum chamber is preferably less than 133×10⁻¹ Pa(1×10⁻¹ Torr), and more preferably less than 133×10⁻¹ Pa (1×10⁻¹ Torr).The inert gas-oxygen ratio in an ambient atmosphere in the vacuumchamber is preferably 300:1-10:1 in volume ratio, and more preferably150:1-50:1. The first buffer layer 7 can grow epitaxially with moreefficiency if conditions for formation of the first buffer layer 7 areadopted within the range described above.

The average thickness of the first buffer layer 7 can be adjusted to bethe thickness, i.e., around 100 nm by adjusting appropriately theirradiation durations of both the laser and the ion beam. It is usuallypreferable that these irradiation durations of both the laser and theion beam be less than 200 seconds, and it is more preferable that theybe less than 100 seconds, although these depend on the conditionsdescribed above.

According to such a formation method of the first buffer layer 7, thefirst buffer layer 7 is epitaxially grown in a cubic system with a(100)-orientation, as described above, by using an ion beam assist inwhich the irradiation of an ion beam can be adjusted, despite thepresence of a natural oxide film formed on the surface of the siliconsubstrate 2. In this way, the directions of orientation of the crystalgrains of the first buffer layer 7 can be matched with high precision,and therefore the average thickness of the first buffer layer 7 canbecome thinner.

After the first buffer layer 7 is formed in this way, the second bufferlayer 8 is formed on the first buffer layer 7, as shown in FIG. 3B. Thissecond buffer layer 8 can be formed only by a laser ablation method,without an ion beam assist, because the second buffer layer 8 is formedon the first buffer layer 7 having a crystal structure with fewerdefects, which is different from the case of the formation of the firstbuffer layer 7 on the natural oxide film. Namely, CeO₂ of a desiredcomposition or a composition similar to that is used as the target ofthe second buffer layer 8, instead of the target for the first bufferlayer 7, laser light is irradiated on this target and thereby atomsincluding oxygen atoms and metal atoms are ejected from the target, anda plume is generated. The plume targets the first buffer layer 7 formedon the silicon substrate 2 and makes contact with the layer 7, and thenthe second buffer layer 8 grows epitaxially. The conditions, e.g., forlaser ablation, and for forming the second buffer layer 8 are the sameas those for forming the first buffer layer 7.

Next, the third buffer layer 9 is formed on the second buffer layer 8,as shown in FIG. 3C, and consequently a buffer layer 3 including thefirst buffer layer 7, the second buffer layer 8, and the third bufferlayer 9 is obtained. This third buffer layer 9 can be formed by a laserablation method by itself, in the same way as the second buffer layer 8.Namely, YBa₂Cu₃O_(x) of a desired composition or a composition similarto that is used as the target for the third buffer layer 9, instead ofthe target for the second buffer layer 8. Laser light is irradiated onthis target and thereby atoms including oxygen atoms and metal atoms areejected from the target, a plume is generated. The plume targets thesecond buffer layer 8 above the silicon substrate 2 and makes contactwith the second buffer layer 8, and then the third buffer layer 9 growsepitaxially.

In the formation of the third buffer layer 9, an ion beam assist can beused if necessary, in the same way as the formation of the second bufferlayer 8. Namely, as an ion beam is irradiated on the surface of thesecond buffer layer 8, the third buffer layer 9 can be formed on thesecond buffer layer 8. This third buffer layer 9 can be formed moreefficiently with the ion beam assist.

The conditions for forming such a third buffer layer 9 are notrestricted to specified ones, provided that all kinds of metal atoms canreach the second buffer layer 8 at a desired rate (i.e., the compositionof a metal oxide with a perovskite structure) and the third buffer layer9 can grow epitaxially, e.g., the following conditions can be adopted.

The frequency of the laser is preferably less than 30 Hz, and morepreferably less than 15 Hz. The energy density of the laser ispreferably more than 0.5 J/cm², and more preferably more than 2 J/cm².

The temperature of the Si substrate 2 above which the second bufferlayer 8 is formed is preferably around 300-800° C., and more preferablyaround 700° C. The temperature is preferably around 0-50° C., and morepreferably around room temperature (5-30° C.) with the simultaneous useof ion beam irradiation. The distance between the Si substrate 2 abovewhich the second buffer layer 8 is formed and the target is preferablyless than 60 mm, and more preferably less than 45 mm.

The pressure in the vacuum chamber is preferably less than 1 atm, wherea partial pressure of oxygen of the pressure is preferably around399×10⁻³ Pa (3×10⁻³ Torr). In the case of the simultaneous use of theion beam irradiation, the pressure in the vacuum chamber is preferablyless than 133×10⁻¹ Pa (1×10⁻¹ Torr), and more preferably less than133×10⁻³ Pa (1×10⁻³ Torr). In this case, the inert gas-oxygen ratio inthe vacuum chamber is preferably 300:1-10:1 in volume ratio, and morepreferably 150:1-50:1.

The third buffer layer 9 can grow epitaxially with more efficiency ifthe conditions for formation of the third buffer layer 9 are adoptedwithin the range described above. The average thickness of the thirdbuffer layer 9 can be adjusted to be the thickness, i.e., around 30 nmby adjusting appropriately the irradiation durations of both the laserbeam and the ion beam. It is usually preferable that the irradiationduration of the laser be around 3-90 minutes, and it is more preferablethat it be around 15-45 minutes, although this depends on thisconditions described above.

After the third buffer layer 9 is formed in this way, and thereby thebuffer layer 3 is completed, the lower electrode 4 with a perovskitestructure is formed on the third buffer layer 9 (buffer layer 3), asshown in FIG. 4A. This lower electrode 4 can be formed only by a laserablation method by itself, without an ion beam assist, because the lowerelectrode 4 is formed on the third buffer layer 9 with a perovskitestructure with high quality. Namely, SrRuO₃ of a desired composition ora composition similar to that is used as the target for the lowerelectrode 4, instead of the target for the third buffer layer 9, laserlight is irradiated on this target and thereby atoms including oxygenatoms and metal atoms are ejected from the target, and a plume isgenerated. The plume targets the third buffer layer 9 formed above thesilicon substrate 2 and makes contact with the layer 9, and then thelower electrode 4 grows epitaxially.

In this embodiment, an electrode with a perovskite structure (lowerelectrode 4) is formed using an ion beam assist; the lower electrode 4by itself is not restricted to one formed using an ion beam assist.Namely, if at least a part of the buffer layer 3 (first buffer layer 7in this embodiment) is formed by an ion beam assist, the lower electrode4 is formed under the effect of the ion beam assist. The presentinvention includes not only the case in which the lower electrode 4 isformed directly by an ion beam assist, but also the case in which a base(buffer layer 3) is formed directly by an ion beam assist, andconsequently the lower electrode 4 is formed indirectly by an ion beamassist.

The conditions for forming the lower electrode 4 are not restricted tospecified ones, provided that all kinds of metal atoms can reach thethird buffer layer 9 at a desired rate (i.e., the composition of a metaloxide with a perovskite structure) and the lower electrode 4 can growepitaxially, e.g., the same conditions, for laser ablation, and forforming the third buffer layer 9, can be applied. In the formation ofthe lower electrode 4, an ion beam assist can be used if necessary, inthe same way as in the formation of the third buffer layer 9. Namely, asan ion beam is irradiated on the surface of the third buffer layer 9,the lower electrode 4 can be formed on the third buffer layer 9. Thelower electrode 4 can be formed more efficiently with the ion beamassist.

Next, the ferroelectric layer 5 is formed on the lower electrode 4, asshown in FIG. 4B. The (001)-oriented ferroelectric layer 5 with atetragonal structure with high quality can be formed only by a laserablation method, without an ion beam assist, because the ferroelectriclayer 5 is formed on the lower electrode 4 with a perovskite structurewith high quality. Namely, BiFeO₃ of a desired composition or acomposition similar to that is used as a target of the ferroelectriclayer 5, instead of a target for the lower electrode 4, laser light isirradiated on this target and thereby atoms including oxygen atoms andmetal atoms are ejected from the target, and a plume is generated. Theplume targets the lower electrode 4 formed above the Si substrate 2 andmakes contact with the lower electrode 4, and then a (001)-orientedferroelectric layer 5 with a tetragonal structure grows epitaxially.

BiFeO₃ can be used as the target for the ferroelectric layer 5, butBiFeO₃, in which some Fe atoms located at B-sites in the structure aresubstituted by magnetic metal atoms, such as Mn, Ru, Co, and Ni, ormetal atoms whose valencies are higher than that of Fe, such as V, Nb,Ta, W, Ti, Zr, and Hf, can be used. A ferroelectric layer 5 with higherperformance can be formed using these targets.

Conditions for forming the ferroelectric layer 5 are not restricted tospecified ones, provided that all kinds of metal atoms can reach thelower electrode 4 at a desired rate (i.e., the composition of a metaloxide with a perovskite structure) and a ferroelectric layer 5 can growepitaxially, e.g., the same conditions for laser ablation, and forforming the third buffer layer 9 and the lower electrode 4, can beapplied. In the formation of the ferroelectric layer 5, an ion beamassist can be used if necessary, in the same way as in the formation ofa third buffer layer 9. Namely, as an ion beam is irradiated on thesurface of the lower electrode 4, the ferroelectric layer 5 can beformed on the lower electrode 4. This ferroelectric layer 5 can beformed more efficiently with the ion beam assist.

Next, the upper electrode 6 is formed on the ferroelectric layer 5 asshown in FIG. 4C, and the ferroelectric memory device 1 of oneembodiment of the present invention is obtained. In the same way as thecase of the lower electrode 4 and the ferroelectric layer 5, the(100)-oriented upper electrode 6 with a pseudo cubic system with highquality can be formed only by a laser ablation method, without an ionbeam assist, because the upper electrode 6 is formed on theferroelectric layer 5 with a perovskite structure with high quality.Namely, SrRuO₃ of a desired composition or a composition similar to thatis used as the target for the upper electrode 6, instead of a target forthe ferroelectric layer 5, laser light is irradiated on this target andthereby atoms including oxygen atoms and metal atoms are ejected fromthe target, and a plume is generated. The plume targets theferroelectric layer 5 formed above the Si substrate 2 and makes contactwith the ferroelectric layer 5, and then a (100)-oriented upperelectrode 6 with a pseudo cubic system grows epitaxially.

The conditions for forming the upper electrode 6 are not restricted tospecified ones, provided that all kinds of metal atoms can reach theferroelectric layer 5 at a desired rate (i.e., the composition of ametal oxide with a perovskite structure) and the upper electrode 6 cangrow epitaxially, e.g., the same conditions, for laser ablation, and forforming the third buffer layer 9 and the lower electrode 4, can beapplied. In the formation of the upper electrode 6, an ion beam assistcan be used if necessary, in the same way as in the formation of thethird buffer layer 9. Namely, as an ion beam is irradiated on thesurface of the ferroelectric layer 5, the upper electrode 6 can beformed on the ferroelectric layer 5. The upper electrode 6 can be formedmore efficiently with the ion beam assist.

X-ray diffraction analysis of the ferroelectric layer 5 in theferroelectric memory device 1 obtained in this way showed that theferroelectric layer 5 has a tetragonal structure with a(001)-orientation at room temperature. Therefore, it has been confirmedthat the polarization axis of this ferroelectric layer 5 isperpendicular to the upper surface of the Si substrate 2. It has alsobeen confirmed that this ferroelectric layer 5 has high ferroelectriccharacteristics. Namely, the residual polarization moment Pr of theferroelectric layer 5 is measured by switching electrical charges at thelower electorode 4 and an upper electorode 6 with an external electricfield, and Pr was 60 μC/cm². This ferroelectric layer 5 had apolarization moment up to 280° C. and maintained the ferroelectricity.It has been confirmed that a structural phase transition did not occurdown to −40° C. It has been confirmed that the relative variation of theresidual polarization moment Pr was within a low range of less than 20%in a temperature range between 0-100° C.

As described above, a ferroelectric layer 5 in the ferroelectric memorydevice 1 of the present embodiment shows good ferroelectriccharacteristics, and therefore the ferroelectric memory device 1 has avery high performance. It is possible to directly implement theferroelectric memory device onto the Si substrate 2 so that it ispossible to attain high performance and high-density integration ofsemiconductor devices including the ferroelectric memory device.Additionally, it is advantageous because the ferroelectric memory deviceis environmentally preferable because of no inclusion of Pb therein.

FIG. 5 shows a schematic illustration of another embodiment of thepresent ferroelectric memory device, where reference number 10 indicatesa ferroelectric memory device 10. The ferroelectric memory device 10 isformed on a (100)-plane of the silicon (Si) substrate 2, and includes alower electrode 11 formed on the Si substrate 2, a ferroelectric layer12 formed on the lower electrode 11, and an upper electrode 13 formed onthe ferroelectric layer 12.

The lower electrode 11 is an electrode in the present invention, and ismade of Pt (platinum) and has a thickness of around 50 nm. Since Pt isoriented in a (111)-orientation regardless of the film formation method,a Pt layer can grow with self-orientation on a natural oxide grown onthe Si substrate 2 with a rather simple method such as vacuumdeposition.

The ferroelectric layer 12 works as a recording material in theferroelectric memory device 10, and is made of BiFeO₃ with a perovskitestructure, in the same way as the ferroelectric layer 5. Thisferroelectric layer 5 is grown epitaxially with a rhombohedral structurewith a (111)-orientation, e.g., of a thickness of around 60 nm.

In such a BiFeO₃ with a perovskite structure, some Fe atoms located atB-sites can be substituted by magnetic metal atoms such as Mn, Ru, Co,or Ni described above, in the same way as the ferroelectric layer 5. Itis preferable that Mn and Ru whose ionic radii are larger than that ofFe be preferably added, and by this substitution with these metal atoms,a BiFeO₃ layer with a rhombohedral structure can grow epitaxially withgood quality. In BiFeO₃, some Fe atoms located at B-sites can besubstituted by metal atoms whose valencies are higher than that of Fe.It is preferable that metal atoms whose valencies are higher than thatof Fe (+3 value), namely, V (+5 value), Nb (+5 value), Ta (+5 value), W(+5 value), Ti (+4 value), Zr (+4 value), or Hf (+4 value) can be added.The upper electrode 13 in this embodiment is made of Pt with a thicknessof around 50 nm, which is grown epitaxially, in the same way as thelower electrode 11.

In manufacturing such a ferroelectric memory device 10, an Si substrate2 whose surface is a (100)-plane is prepared, in the same way as theprevious embodiment. Next, by a vacuum deposition, for example, thelower electrode 11 made of Pt is formed on a natural oxide film formedon the surface of this Si substrate 2. In this way, a Pt layer can groweasily with self-orientation of a (111)-orientation on the Si substrate2 (on a natural oxide). Known general conditions for the formation of afilm can be applied to conditions for forming this lower electrode 11,that is, the conditions for the formation of a Pt film.

Next, the ferroelectric layer 12 is formed on the lower electrode 11. A(111)-oriented ferroelectric layer 12 with a rhombohedral structure withhigh quality can be formed by a laser ablation method, because theferroelectric layer 12 is formed on the lower electrode 11 with a(111)-orientation. Namely, BiFeO₃ of a desired composition or acomposition similar to that is used as the target for the ferroelectriclayer 12, laser light is irradiated on this target and thereby atomsincluding oxygen atoms and metal atoms are ejected from the target, anda plume is generated. The plume targets the lower electrode 11 formedabove the Si substrate 2 and makes contact with the lower electrode 11,and then a (111)-oriented ferroelectric layer 12 with a rhombohedralstructure grows.

The same targets for the ferroelectric layer 5 can be applied as targetsfor the ferroelectric layer 12. The conditions for forming theferroelectric layer 5 can also be applied to conditions for forming theferroelectric layer 12. For forming the ferroelectric layer 12, an ionbeam assist can be used if necessary. Namely, as an ion beam isirradiated on the surface of the lower electrode 11, the ferroelectriclayer 12 can be formed on the lower electrode 11. The ferroelectriclayer 12 can be formed more efficiently with the ion beam assist.

Next, the upper electrode 13 is formed on the ferroelectric layer 12 anda ferroelectric memory device 10 of the present invention is obtained.Since this upper electrode 13 is formed of Pt in the same way as thelower electrode 11, this formation can be carried out by sputtering inthe same way as the formation of the lower electrode 11.

X-ray diffraction analysis of the ferroelectric layer 12 in theferroelectric memory device 10 obtained in this way shows that theferroelectric layer 12 has a rhombohedral structure with a(111)-orientation at a room temperature. Therefore, it has beenconfirmed that the polarization axis of this ferroelectric layer 12 isperpendicular to the upper surface of the Si substrate 2. It has alsobeen confirmed that this ferroelectric layer 12 has high ferroelectriccharacteristics. Namely, the residual polarization moment Pr of theferroelectric layer 12 is measured by switching electrical charges atthe lower electorode 11 and the upper electorode 13 with an externalelectric field, and Pr was 20 μC/cm². This ferroelectric layer 12 had apolarization moment up to 270° C. and maintained the ferroelectricity.It has been confirmed that a structural phase transition did not occurdown to −40° C. It has been confirmed that relative variation of aresidual polarization moment Pr was within a low range of less than 20%in a range between 0-100° C.

As described above, the ferroelectric layer 12 in the ferroelectricmemory device 10 of the present embodiment shows good ferroelectriccharacteristics, and therefore the ferroelectric memory device 10 has avery high performance. It is possible to directly implement theferroelectric memory device into the Si substrate 2 so that it ispossible to attain high performance and high-density integration ofsemiconductor devices including the ferroelectric memory device.Additionally, it is advantageous because the ferroelectric memory device10 is environmentally preferable because of no inclusion of Pb therein.

In this ferroelectric memory device 10, the material for the upperelectrode 13 is not restricted to Pt, but other known electrodematerials such as Ir, IrO_(x), and SrRuO₃ can be used. The material forthe upper electrode 11 is not restricted to Pt with a (111)-orientation,but other electrode materials with a perovskite structure with a(111)-orientation can be used.

In the case in which another electrode with a perovskite structure witha (111)-orientation is used as the lower electrode 11, it isadvantageous that this electrode is formed on the buffer layer with a(111)-orientation by self-orientation. Namely, the buffer layer 3 isformed on the Si substrate 2, and the lower electrode 11 is formed onthis buffer layer 3.

The buffer layer 3 is formed of YSZ with a (111)-orientation byself-orientation. Namely, since YSZ has a fluorite structure and metalatoms in the structure are arranged with a face-centered cubicstructure, it easily takes a self-orientation with a (111)-orientation.In the same way as the previous embodiment, the first buffer layer 7 ofYSZ with a (111)-orientation is formed by laser ablation, and the secondbuffer layer 8 and third buffer layer 9 are formed of transition metaloxides with a (111)-plane. In another method of forming the buffer layer3, the buffer layer 3 is formed of ZnO with a hexagonal structure with a(0001) self-orientation. As the same as the previous embodiment, thefirst buffer layer 7 of ZnO with a hexagonal structure with a (0001)self-orientation is formed by a laser ablation, and the second bufferlayer 8 and third buffer layer 9 are formed of transition metal oxideswith a (111)-plane.

After the buffer layer 3 is formed in this way, the (111)-oriented lowerelectrode 11 with a perovskite structure of a thickness of around 50 nmis grown epitaxially on the third buffer layer 9. The materials forforming the third buffer layer 9 in the previous embodiment can beapplied for forming this lower electrode 11 with a perovskite structuregrown epitaxially, and especially at least one of SrRuO₃, Nb—SrTiO₃,La—SrTiO₃, and (La, Sr)CoO₃ can be preferably applied. These metaloxides have good electric conductivity and good chemical stability, andtherefore the lower electrode 11 made of these metal oxides has goodelectric conductivity and good chemical stability. Additionally, a(111)-oriented BiFeO₃ ferroelectric layer with a rhombohedral structurewith good quality can be formed on the lower electrode 11. In thisexample, SrRuO₃ with a (111)-orientation is used.

A laser ablation method is used in the formation of the lower electrode11, and an ion beam assist can be used if necessary. Namely, as an ionbeam is irradiated on the surface of the third buffer layer 9, a lowerelectrode 11 can be formed on the third buffer layer 9. This lowerelectrode 11 can be formed more efficiently with the ion beam assist.Also in the case in which a (111)-orientated electrode with a perovskitestructure is used as the lower electrode 11, the ferroelectric layer 12and upper electrode 13 are formed above this lower electrode 11, asdescribed above.

X-ray diffraction analysis of the ferroelectric layer 12 in theferroelectric memory device 1 in which the (111)-oriented lowerelectrode 11 with a perovskite structure formed on the buffer layer 3shows that the ferroelectric layer 12 has a rhombohedral structure witha (111)orientation at room temperature. Therefore, it has been confirmedthat the polarization axis of this ferroelectric layer 12 isperpendicular to the upper surface of the Si substrate 2. It has alsobeen confirmed that this ferroelectric layer 12 has high ferroelectriccharacteristics, in the same way as the previous embodiment in which Ptis used as the lower electrode 11.

FIG. 6 shows a schematic illustration of an example of a planar-typeferroelectric memory device in which the ferroelectric memory device 1(10) is applied as a capacitor. Reference number 20 in FIG. 6 indicatesa planar-type ferroelectric memory device. In the planar-typeferroelectric memory device 20, an MOS transistor 22 is formed on an Sisubstrate 21, and a first interlayer dielectric 23, second interlayerdielectric 24, and the ferroelectric memory device 1 (10) are formed inturn above the MOS transistor 22. In this figure, only a lower electrode25, a ferroelectric layer 26, and an upper electrode 27 are shown, andthe buffer layer 3 can be formed if necessary.

In the MOS transistor 22, its gate corresponds to a word line 28. A bitline 29 is connected to one source-drain region and a local line 30 isconnected to another source-drain region, and the upper electrode 27 isconnected to the local line 30. In this planar-type ferroelectric memorydevice 20 with such a constitution, the ferroelectric memory device 1(10) is controlled by the MOS transistor 22, and writing and reading arecarried out by its high speed inversion characteristic.

While preferred embodiments of the invention have been described andillustrated above, it should be understood that these are exemplary ofthe invention and are not to be considered as limiting. Additions,omissions, substitutions, and other modifications can be made withoutdeparting from the spirit or scope of the present invention.Accordingly, the invention is not to be considered as being limited bythe foregoing description, and is only limited by the scope of theappended claims.

1. A ferroelectric memory device comprising: an Si oxide film; anelectrode made of a perovskite material and formed on the Si oxide film;and a (001)-oriented BiFeO₃ ferroelectric layer with a tetragonalstructure formed on the electrode.
 2. A ferroelectric memory deviceaccording to claim 1, wherein the electrode made of a perovskitematerial is formed by an ion beam assist deposition method.
 3. Aferroelectric memory device according to claim 1, wherein the electrodemade of a perovskite material is epitaxially grown with a(100)-orientation.
 4. A ferroelectric memory device according to claim1, wherein the electrode made of a perovskite material is made of atleast one of SrRuO₃, Nb—SrTiO₃, La—SrTiO₃, and (La, Sr)CoO₃.
 5. Aferroelectric memory device according to claim 1, wherein the electrodemade of a perovskite material is formed on a buffer layer which isformed on a substrate by an ion beam assist deposition method.
 6. Aferroelectric memory device according to claim 5, wherein the bufferlayer is epitaxially grown with a (100)-orientation.
 7. A ferroelectricmemory device according to claim 1, wherein the BiFeO₃ ferroelectriclayer has a perovskite structure, in which some Fe atoms located atB-sites in the structure are substituted by magnetic metal atoms.
 8. Aferroelectric memory device according to claim 7, wherein the magneticmetal atoms are at least one selected from the group of Mn, Ru, Co, andNi.
 9. A ferroelectric memory device according to claim 7, wherein themagnetic metal atoms are substituted for 1-10% of Fe atoms located atall of the B-sites in the BiFeO₃ ferroelectric layer.
 10. Aferroelectric memory device according to claim 7, wherein the BiFeO₃ferroelectric layer has a perovskite structure, in which some Fe atomslocated at B-sites are substituted by metal atoms whose valencies arehigher than that of Fe.
 11. A ferroelectric memory device according toclaim 10, wherein the metal atoms whose valencies are higher than thatof Fe are at least one selected from the group of V, Nb, Ta, W, Ti, Zr,and Hf.
 12. A ferroelectric memory device according to claim 10, whereinthe metal atoms which valencies are higher than Fe are substituted for1-30% of Fe atoms located at all of the B-sites in the BiFeO₃ferroelectric layer.
 13. A ferroelectric memory device comprising: anelectrode with a (111)-orientation; and a (111)-oriented BiFeO₃ferroelectric layer with a rhombohedral structure formed on theelectrode.
 14. A ferroelectric memory device according to claim 13,wherein the electrode with a (111)-orientation is formed of Pt with a(111)-orientation.
 15. A ferroelectric memory device according to claim13, wherein the electrode with a (111)-orientation has a perovskitestructure.
 16. A ferroelectric memory device according to claim 13,wherein the electrode is epitaxially grown with a (111)-orientatedperovskite structure by an ion beam assist deposition method.
 17. Aferroelectric memory device according to claim 16, wherein the electrodeis made of at least one of SrRuO₃, Nb—SrTiO₃, La—SrTiO₃, and (La,Sr)CoO₃.
 18. A ferroelectric memory device according to claim 13,wherein the BiFeO₃ ferroelectric layer has a perovskite structure, inwhich some Fe atoms located at B-sites in the structure are substitutedby magnetic metal atoms.
 19. A ferroelectric memory device according toclaim 18, wherein the magnetic metal atoms are at least one selectedfrom the group of Mn, Ru, Co, and Ni.
 20. A ferroelectric memory deviceaccording to claim 18, wherein the magnetic metal atoms are substitutedfor 1-10% of Fe atoms located at all of the B-sites in the BiFeO₃ferroelectric layer.
 21. A ferroelectric memory device according toclaim 13, wherein the BiFeO₃ ferroelectric layer has a perovskitestructure, in which some Fe atoms located at B-sites are substituted bymetal atoms whose valencies are higher than that of Fe.
 22. Aferroelectric memory device according to claim 21, wherein the metalatoms whose valencies are higher than that of Fe are at least oneselected from the group of V, Nb, Ta, W, Ti, Zr, and Hf.
 23. Aferroelectric memory device according to claim 21, wherein the metalatoms whose valencies are higher than Fe are substituted for 1-30% of Featoms located at all of the B-sites in the BiFeO₃ ferroelectric layer.